Prof. Dr. Elias Stathatos, University of the Peloponnese, Greece

Elias Stathatos graduated from the Physics Department in 1991 and received his PhD in Materials Science/School of Engineering in 1999, both from the University of Patras, Greece. He was a Visiting Scholar at the University of Cincinnati, Ohio, USA, in 2004. From 2005 to 2019, he was a faculty member of the Technological Educational Institute of Patras and is currently a Professor at the University of Peloponnese. In the period 2008–2010, he was Department Head of the Electrical Engineering Department at Technological Educational Institute of Patras. His research interests encompass different themes, such as the conversion of solar into electrical energy using dye-sensitized, quantum dot, and perovskite solar cells employing nanostructured materials. Furthermore, Prof. Stathatos is also interested in the application of electrochromic nanocomposite materials in smart windows as well as OLED and OFET devices and nanosensors in environmental applications. He is the author of more than 140 papers published in ISI journals recognized by more than 6500 citations, six book chapters, and five international patents related to solar cells and electrochromic devices. He has been an invited speaker or reviewer in numerous international journals. He is also Associate Editor of the International Journal of Photoenergy (Hindawi Publishing Corporation) in addition to being on the advisory board of their publication Materials Science in Semiconductor Processing. In 2020, he was appointed as Section Editor-in-Chief for the Section "Microelectronics and Optoelectronics" of Electronics. He has also organized several Special Issues in international journals.

Dr. Sanshui Xiao, Technical University of Denmark (DTU), Denmark

Sanshui Xiao obtained his PhD degree at Zhejiang University in 2004 and he is now an Associate Professor at the Technical University of Denmark. His current research interests mainly focus on the exploration of fundamental physics of light-matter interactions and the development of 2D materials-based optoelectronic devices. He has published more than 120 journal papers with a total citation of 4000 and an h-index of 33 (Google scholar). He has co-organized several sessions at SPIE, PIERS, AME, and EMN conferences, and obtained the European Optics Prize from the European Optical Society in 2008. He is the senior member of OSA and SPIE, and also serves as the topical editor for Applied Optics.

Prof. Dr. Yahya M. Meziani, Salamanca University, Spain

Dr. Yahya Meziani is currently working as an Associate Professor at the Department of Applied Physics, Salamanca University. He was working as a researcher for Tohoku University, Japan and for Montpellier 2 University, France. Dr. Meziani has been conducting research on the Quantum Hall effect phenomenon and its application for the conservation of the Ohm unit. His research focuses on the development of new electronic devices that can emit and/or detect terahertz radiation at room temperature. He is author and co-author of more than 90 scientific publications. He has an h-index of 19 according to the web of science.

Speaker/Presentation

Time in CEST

Prof. Dr. Elias Stathatos

Chair Introduction

10:00 – 10:15 am

Dr. Sanshui Xiao

Integrated 2D Materials Based Optoelectronic Devices

Abstract: With unique possibilities for controlling light in nanoscale devices, graphene has opened new perspectives to the nanophotonics community with potential applications in metamaterials, modulators, photodetectors, and sensors. In this talk, I will mainly present our recent results on graphene-based optoelectronic devices, including silicon ring-resonator modulators, graphene plasmonic waveguide modulators, and graphene plasmonic photodetectors. Particularly I will focus on how to use 2D materials to realize high-performance optoelectronic devices with potential applications in on-chip optical interconnects.

10:15 – 10:45 am

Prof. Dr. Yahya M. Meziani

2D Material-Based Devices for Terahertz Technology

Abstract: In this work, an exfoliated graphene sheet was encapsulated between two flakes of h-BN and placed on a highly doped SiO2/Si substrate. An asymmetric dual-grating gate was implemented on the top h-BN flake. The device was characterized under excitation of terahertz radiation at two tones frequencies: 0.15 THz and 0.3 THz from 4K up to room temperature. Even though no antenna was used to couple the incoming radiation, a clear gate-bias-dependent photocurrent was measured under excitation at 0.3 THz up to room temperature. The device was used as a sensor for the terahertz imaging system where inspection of the hidden object was demonstrated.

10:45 – 11:15 am

Q&A Session

11:15 – 11:35 am

Closing of Webinar
Prof. Dr. Elias Stathatos

11:35 – 11:45 am